2SK2507(F)

new-10%

Manufacturer part number:2SK2507(F)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 50V 25A TO220NIS

Case Package:SOT-23

Datasheet:2SK2507(F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220NIS
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Power Dissipation	30W
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	46mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 10V
Current - Continuous Drain (Id) @ 25°C	25A Ta
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	50V
Input Capacitance	900pF
Drain to Source Resistance	46mOhm
Rds On Max	46 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free