NP33N06YDG-E1-AY

new-10%

Manufacturer part number:NP33N06YDG-E1-AY

Manufacturer:Renesas Electronics America

Description:Trans MOSFET N-CH 60V 33A Automotive 8-Pin HSON T/R

Case Package:SOT-23

Datasheet:NP33N06YDG-E1-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead Exposed Pad
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta 97W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	33A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.02Ohm
DS Breakdown Voltage-Min	60V
Feedback Cap-Max (Crss)	220 pF
Radiation Hardening	No
RoHS Status	ROHS3 Compliant