NP40N10PDF-E1-AY

new-10%

Manufacturer part number:NP40N10PDF-E1-AY

Manufacturer:Renesas Electronics America

Description:Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-263 T/R

Case Package:SOT-23

Datasheet:NP40N10PDF-E1-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta 120W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	80A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	61 mJ
RoHS Status	ROHS3 Compliant