SI4170DY-T1-GE3

new-10%

Manufacturer part number:SI4170DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 30A 8-SOIC

Case Package:SOT-23

Datasheet:SI4170DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	540.001716mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3W Ta 6W Tc
Power Dissipation	3W
Turn On Delay Time	36 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4355pF @ 15V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	4.355nF
Drain to Source Resistance	3.5mOhm
Rds On Max	3.5 mΩ
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free