NP55N055SDG-E1-AY

new-10%

Manufacturer part number:NP55N055SDG-E1-AY

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 55V 55A TO-252

Case Package:SOT-23

Datasheet:NP55N055SDG-E1-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Configuration	Single
Power Dissipation-Max	1.2W Ta 77W Tc
Power Dissipation	1.2W
Turn On Delay Time	17 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9.5m Ω @ 28A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	55A Tc
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	71 ns
Continuous Drain Current (ID)	55A
Gate to Source Voltage (Vgs)	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free