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RP1E070XNTCR

RP1E070XNTCR

RP1E070XNTCR

ROHM Semiconductor

MOSFET N-CH 30V 7A MPT6

SOT-23

RP1E070XNTCR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Supplier Device Package MPT6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 7A
Input Capacitance 390pF
Rds On Max 28 mΩ
RoHS Status ROHS3 Compliant

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