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RJH60V3BDPE-00#J3

RJH60V3BDPE-00#J3

RJH60V3BDPE-00#J3

Renesas Electronics America

IGBT 600V 35A 113W LDPAK

SOT-23

RJH60V3BDPE-00#J3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-83
Number of Pins 83
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 113W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number RJH60V
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 113W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 35A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 60 ns
Test Condition 300V, 17A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 17A
Turn Off Time-Nom (toff) 165 ns
IGBT Type Trench
Gate Charge 60nC
Td (on/off) @ 25°C 40ns/90ns
Switching Energy 90μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max 30V
RoHS Status ROHS3 Compliant

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