SGS6N60UFDTU Description

SGS6N60UFDTU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SGS6N60UFDTU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor SGS6N60UFDTU has the common source configuration.

SGS6N60UFDTU Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SGS6N60UFDTU Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display