RJK0332DPB-01#J0

new-10%

Manufacturer part number:RJK0332DPB-01#J0

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 30V 35A LFPAK

Case Package:SOT-23

Datasheet:RJK0332DPB-01#J0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	45W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	45W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.7m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2180pF @ 10V
Current - Continuous Drain (Id) @ 25°C	35A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.007Ohm
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free