SI1402DH-T1-E3

new-10%

Manufacturer part number:SI1402DH-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 2.7A SOT363

Case Package:SOT-23

Datasheet:SI1402DH-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Supplier Device Package	SC-70-6 (SOT-363)
Weight	28.009329mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	950mW Ta
Element Configuration	Single
Power Dissipation	950mW
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	77mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Current - Continuous Drain (Id) @ 25°C	2.7A Ta
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	2.7A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	77mOhm
Rds On Max	77 mΩ
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant