RJK0703DPN-A0#T2

join

new-10%

Manufacturer part number:RJK0703DPN-A0#T2

Manufacturer:Renesas Electronics America

Description:MOSFET (Metal Oxide) N-Channel 6.7m Ω @ 35A, 10V ±20V 4150pF @ 10V 56nC @ 10V 75V TO-220-3

Case Package:SOT-23

Datasheet:RJK0703DPN-A0#T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	150°C
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	125W Ta
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.7m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4150pF @ 10V
Current - Continuous Drain (Id) @ 25°C	70A Ta
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$3.91000	$3.91
500	$3.8709	$1935.45
1000	$3.8318	$3831.8
1500	$3.7927	$5689.05
2000	$3.7536	$7507.2
2500	$3.7145	$9286.25

RJK0703DPN-A0#T2 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4150pF @ 10V.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).