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STF5N95K3

STF5N95K3

STF5N95K3

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 3.5 Ω @ 2A, 10V ±30V 460pF @ 25V 19nC @ 10V TO-220-3 Full Pack

SOT-23

STF5N95K3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.5Ohm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF5N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection ISOLATED
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 950V
Pulsed Drain Current-Max (IDM) 16A
Avalanche Energy Rating (Eas) 100 mJ
Height 16.4mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.19000 $3.19
50 $2.57120 $128.56
100 $2.31410 $231.41
500 $1.79988 $899.94
1,000 $1.49133 $1.49133
2,500 $1.38848 $2.77696
5,000 $1.33705 $6.68525
STF5N95K3 Product Details

STF5N95K3 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 460pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.In this device, the drain-source breakdown voltage is 950V and VGS=950V, so the drain-source breakdown voltage is 950V in this case.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [32 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 16A.A turn-on delay time of 17 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STF5N95K3 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 950V voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 16A.
a threshold voltage of 4V


STF5N95K3 Applications


There are a lot of STMicroelectronics
STF5N95K3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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