RJK1002DPN-A0#T2

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Manufacturer part number:RJK1002DPN-A0#T2

Manufacturer:Renesas Electronics America

Description:MOSFET (Metal Oxide) N-Channel 7.6m Ω @ 35A, 10V ±20V 6450pF @ 10V 94nC @ 10V 100V TO-220-3

Case Package:SOT-23

Datasheet:RJK1002DPN-A0#T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	150°C
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	150W Ta
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.6m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6450pF @ 10V
Current - Continuous Drain (Id) @ 25°C	70A Ta
Gate Charge (Qg) (Max) @ Vgs	94nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$4.58000	$4.58
500	$4.5342	$2267.1
1000	$4.4884	$4488.4
1500	$4.4426	$6663.9
2000	$4.3968	$8793.6
2500	$4.351	$10877.5

RJK1002DPN-A0#T2 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6450pF @ 10V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.