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RJK5030DPD-01#J2

RJK5030DPD-01#J2

RJK5030DPD-01#J2

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.6 Ω @ 2A, 10V ±30V 550pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

RJK5030DPD-01#J2 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 41.7W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RJK5030DPD-01#J2 Product Details

RJK5030DPD-01#J2 Overview


The maximum input capacitance of this device is 550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

RJK5030DPD-01#J2 Features


a 500V drain to source voltage (Vdss)


RJK5030DPD-01#J2 Applications


There are a lot of Renesas Electronics America
RJK5030DPD-01#J2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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