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RJK5030DPD-02#J2

  • RJK5030DPD-02#J2
  • RJK5030DPD-02#J2

RJK5030DPD-02#J2

RJK5030DPD-02#J2

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.6 Ω @ 2A, 10V ±30V 550pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

RJK5030DPD-02#J2 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 41.7W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RJK5030DPD-02#J2 Product Details

RJK5030DPD-02#J2 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 550pF @ 25V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

RJK5030DPD-02#J2 Features


a 500V drain to source voltage (Vdss)


RJK5030DPD-02#J2 Applications


There are a lot of Renesas Electronics America
RJK5030DPD-02#J2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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