GP1M010A080N

new-10%

Manufacturer part number:GP1M010A080N

Manufacturer:SemiQ

Description:MOSFET N-CH 900V 10A TO3PN

Case Package:SOT-23

Datasheet:GP1M010A080N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	312W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.05Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2336pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	53nC @ 10V
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V