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RJK5031DPD-01#J2

  • RJK5031DPD-01#J2
  • RJK5031DPD-01#J2

RJK5031DPD-01#J2

RJK5031DPD-01#J2

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.2 Ω @ 1.5A, 10V ±30V 280pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

RJK5031DPD-01#J2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40.3W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RJK5031DPD-01#J2 Product Details

RJK5031DPD-01#J2 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 280pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

RJK5031DPD-01#J2 Features


a 500V drain to source voltage (Vdss)


RJK5031DPD-01#J2 Applications


There are a lot of Renesas Electronics America
RJK5031DPD-01#J2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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