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RJK6002DPD-WS#J2

RJK6002DPD-WS#J2

RJK6002DPD-WS#J2

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.8 Ω @ 1A, 10V ±30V 165pF @ 25V 6.2nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

RJK6002DPD-WS#J2 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RJK6002DPD-WS#J2 Product Details

RJK6002DPD-WS#J2 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 165pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

RJK6002DPD-WS#J2 Features


a 600V drain to source voltage (Vdss)


RJK6002DPD-WS#J2 Applications


There are a lot of Renesas Electronics America
RJK6002DPD-WS#J2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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