SI5479DU-T1-GE3

new-10%

Manufacturer part number:SI5479DU-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 16A CHIPFET

Case Package:SOT-23

Datasheet:SI5479DU-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Single
Supplier Device Package	PowerPAK® ChipFet Single
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	21mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.1W Ta 17.8W Tc
Element Configuration	Single
Power Dissipation	3.1W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	21mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1810pF @ 6V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 8V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
Input Capacitance	1.81nF
Drain to Source Resistance	21mOhm
Rds On Max	21 mΩ
RoHS Status	ROHS3 Compliant