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RJK6032DPH-E0#T2

RJK6032DPH-E0#T2

RJK6032DPH-E0#T2

Renesas Electronics America

RJK6032DPH-E0 Series 600 V 4.3 Ohm N Channel High Speed Power Switching MOSFET

SOT-23

RJK6032DPH-E0#T2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 4
Configuration Single
Power Dissipation-Max 40.3W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.3 Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 285pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 3A
Drain Current-Max (Abs) (ID) 3A
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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