STW17N62K3

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Manufacturer part number:STW17N62K3

Manufacturer:STMicroelectronics

Description:STW17N62K3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW17N62K3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	SuperMESH3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	280mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE ENERGY RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW17N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 50V
Current - Continuous Drain (Id) @ 25°C	15.5A Tc
Gate Charge (Qg) (Max) @ Vgs	94nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	63 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	15.5A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	620V
Pulsed Drain Current-Max (IDM)	60A
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free