This device's continuous drain current (ID) is 4.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 47mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.
UPA1763G-E1-A Features
a continuous drain current (ID) of 4.5A a drain-to-source breakdown voltage of 60V voltage the turn-off delay time is 50 ns single MOSFETs transistor is 47mOhm
UPA1763G-E1-A Applications
There are a lot of Renesas Electronics America UPA1763G-E1-A applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU