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71256L35TDB

71256L35TDB

71256L35TDB

Renesas Electronics America Inc.

Memory IC

SOT-23

71256L35TDB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Package / Case 28-CDIP (0.300, 7.62mm)
Operating Temperature -55°C~125°C TA
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SRAM - Asynchronous
Voltage - Supply 4.5V~5.5V
Memory Size 256Kb 32K x 8
Memory Type Volatile
Memory Format SRAM
Memory Interface Parallel
Write Cycle Time - Word, Page 35ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
130 $22.52877 $2928.7401
71256L35TDB Product Details

71256L35TDB Overview


There is a Volatile memory type associated with this device. There is a Tube case available. 28-CDIP (0.300, 7.62mm) case encloses it. Memory size on the chip is 256Kb 32K x 8. There is a mainstream memory format used by this device, which is called SRAM-format memory. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -55°C~125°C TA. A supply voltage of 4.5V~5.5V can be applied to it. The recommended mounting type for this device is Through Hole.

71256L35TDB Features


Package / Case: 28-CDIP (0.300, 7.62mm)

71256L35TDB Applications


There are a lot of Renesas Electronics America Inc. 71256L35TDB Memory applications.

  • eDRAM
  • data buffer
  • telecommunications
  • DVD disk buffer
  • cell phones
  • workstations,
  • servers
  • Cache memory
  • embedded logic
  • nonvolatile BIOS memory

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