Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Non-Inverting 2 36V V 10-VFDFN Exposed Pad ISL6596 Half-Bridge
SOT-23
ISL6596IRZ-T Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mounting Type
Surface Mount
Package / Case
10-VFDFN Exposed Pad
Operating Temperature
-40°C~125°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Voltage - Supply
4.5V~5.5V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
ISL6596
Pin Count
10
Input Type
Non-Inverting
Rise / Fall Time (Typ)
8ns 8ns
Channel Type
Synchronous
Number of Drivers
2
Driven Configuration
Half-Bridge
Gate Type
N-Channel MOSFET
Current - Peak Output (Source, Sink)
- 4A
High Side Voltage - Max (Bootstrap)
36V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
ISL6596IRZ-T Product Details
ISL6596IRZ-T Overview
For greater flexibility, its 10-VFDFN Exposed Pad package is used.Tape & Reel (TR) represents the package.For its configuration, it incorporates 2 drivers.Surface Mount is mounted in the way.In the absence of a power supply voltage of 4.5V~5.5V V, it is able to demonstrate its superiority.There is a gate type of N-Channel MOSFET in this design.The allowable temperature range that this device can be operated in is -40°C~125°C TJ.Mosfet driver accepts input of type Non-Inverting.Numerous related parts can be found under its base part number ISL6596.10 pins are present on the component.Maximum (Bootstrap) voltage is 36V.
ISL6596IRZ-T Features
Embedded in the Tape & Reel (TR) package 2 drivers Employing a gate type of N-Channel MOSFET High-side voltage - Max (Bootstrap) of 36V
ISL6596IRZ-T Applications
There are a lot of Renesas Electronics America Inc. ISL6596IRZ-T gate drivers applications.
Automotive Applications
Portable computers
Motor controllers
Industrial Modules
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,