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FDN363N

  • FDN363N
  • FDN363N

FDN363N

FDN363N

ROCHESTER ELECTRONICS LLC

FDN363N datasheet pdf and Unclassified product details from ROCHESTER ELECTRONICS LLC stock available on our website

SOT-23

FDN363N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 3
Transistor Element Material SILICON
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.24Ohm
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 8.5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.17000 $0.17
500 $0.1683 $84.15
1000 $0.1666 $166.6
1500 $0.1649 $247.35
2000 $0.1632 $326.4
2500 $0.1615 $403.75

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