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2N4400TA

  • 2N4400TA
  • 2N4400TA

2N4400TA

2N4400TA

Rochester Electronics, LLC

2N4400TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N4400TA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code O-PBCY-W3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Turn Off Time-Max (toff) 255ns
Turn On Time-Max (ton) 35ns
RoHS Status ROHS3 Compliant
2N4400TA Product Details

2N4400TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 150mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (40V maximal voltage).

2N4400TA Features


the DC current gain for this device is 50 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA

2N4400TA Applications


There are a lot of Rochester Electronics, LLC 2N4400TA applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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