PMSTA3904,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website
SOT-23
PMSTA3904,135 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
PMSTA3904
Power - Max
200mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
PMSTA3904,135 Product Details
PMSTA3904,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
PMSTA3904,135 Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 300mV @ 5mA, 50mA
PMSTA3904,135 Applications
There are a lot of NXP USA Inc. PMSTA3904,135 applications of single BJT transistors.