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PMSTA3904,135

PMSTA3904,135

PMSTA3904,135

NXP USA Inc.

PMSTA3904,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

SOT-23

PMSTA3904,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number PMSTA3904
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
PMSTA3904,135 Product Details

PMSTA3904,135 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.This device displays a 40V maximum voltage - Collector Emitter Breakdown.

PMSTA3904,135 Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA

PMSTA3904,135 Applications


There are a lot of NXP USA Inc. PMSTA3904,135 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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