2N5551YBU Overview

In this device, the DC current gain is 180 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Detection of Collector Emitter Breakdown at 160V maximal voltage is present.

2N5551YBU Features

the DC current gain for this device is 180 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz

2N5551YBU Applications

There are a lot of Rochester Electronics, LLC 2N5551YBU applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver