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TSC741CZ C0G

TSC741CZ C0G

TSC741CZ C0G

Taiwan Semiconductor Corporation

TSC741CZ C0G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

TSC741CZ C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 60W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 5V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 2V @ 600mA, 2A
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 2.5A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.34302 $1.37208
TSC741CZ C0G Product Details

TSC741CZ C0G Overview


In this device, the DC current gain is 50 @ 100mA 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 600mA, 2A.The product comes in the supplier device package of TO-220.Collector Emitter Breakdown occurs at 450VV - Maximum voltage.

TSC741CZ C0G Features


the DC current gain for this device is 50 @ 100mA 5V
the vce saturation(Max) is 2V @ 600mA, 2A
the supplier device package of TO-220

TSC741CZ C0G Applications


There are a lot of Taiwan Semiconductor Corporation TSC741CZ C0G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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