TSC741CZ C0G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
TSC741CZ C0G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
60W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
2V @ 600mA, 2A
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
2.5A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.34302
$1.37208
TSC741CZ C0G Product Details
TSC741CZ C0G Overview
In this device, the DC current gain is 50 @ 100mA 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 600mA, 2A.The product comes in the supplier device package of TO-220.Collector Emitter Breakdown occurs at 450VV - Maximum voltage.
TSC741CZ C0G Features
the DC current gain for this device is 50 @ 100mA 5V the vce saturation(Max) is 2V @ 600mA, 2A the supplier device package of TO-220
TSC741CZ C0G Applications
There are a lot of Taiwan Semiconductor Corporation TSC741CZ C0G applications of single BJT transistors.