2N6052 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N6052 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection
COLLECTOR
Power - Max
150W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 6A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 120mA, 12A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
12A
Transition Frequency
4MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.93000
$6.93
20
$6.23700
$124.74
40
$5.68250
$227.3
100
$5.12820
$512.82
260
$4.71238
$1225.2188
500
$4.29660
$2148.3
2N6052 Product Details
2N6052 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 6A 3V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 120mA, 12A.In this part, there is a transition frequency of 4MHz.Device displays Collector Emitter Breakdown (100V maximal voltage).
2N6052 Features
the DC current gain for this device is 750 @ 6A 3V the vce saturation(Max) is 3V @ 120mA, 12A a transition frequency of 4MHz
2N6052 Applications
There are a lot of Rochester Electronics, LLC 2N6052 applications of single BJT transistors.