STLD128DNT4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
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STLD128DNT4 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
20W
Terminal Form
GULL WING
Base Part Number
STLD128
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
20W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 2A
Collector Emitter Breakdown Voltage
400V
Current - Collector (Ic) (Max)
4A
Max Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
9V
hFE Min
8
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.398974
$0.398974
10
$0.376391
$3.76391
100
$0.355085
$35.5085
500
$0.334986
$167.493
1000
$0.316025
$316.025
STLD128DNT4 Product Details
STLD128DNT4 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 2A 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.Breakdown input voltage is 400V volts.Collector current can be as low as 3A volts at its maximum.
STLD128DNT4 Features
the DC current gain for this device is 8 @ 2A 5V the vce saturation(Max) is 1V @ 400mA, 2A the emitter base voltage is kept at 9V
STLD128DNT4 Applications
There are a lot of STMicroelectronics STLD128DNT4 applications of single BJT transistors.