2N6427G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500μA, 500mA.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
2N6427G Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
2N6427G Applications
There are a lot of Rochester Electronics, LLC 2N6427G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
