DN0150ALP4-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DN0150ALP4-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
450mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Frequency
60MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
450mW
Case Connection
COLLECTOR
Gain Bandwidth Product
60MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
60MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Height
350μm
Length
1mm
Width
600μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.084560
$0.08456
500
$0.062176
$31.088
1000
$0.051814
$51.814
2000
$0.047536
$95.072
5000
$0.044426
$222.13
10000
$0.041326
$413.26
15000
$0.039967
$599.505
50000
$0.039299
$1964.95
DN0150ALP4-7 Product Details
DN0150ALP4-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
DN0150ALP4-7 Features
the DC current gain for this device is 120 @ 2mA 6V the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 5V a transition frequency of 60MHz
DN0150ALP4-7 Applications
There are a lot of Diodes Incorporated DN0150ALP4-7 applications of single BJT transistors.