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DN0150ALP4-7

DN0150ALP4-7

DN0150ALP4-7

Diodes Incorporated

DN0150ALP4-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DN0150ALP4-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation450mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 60MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation450mW
Case Connection COLLECTOR
Gain Bandwidth Product60MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 60MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 350μm
Length 1mm
Width 600μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:4163 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.084560$0.08456
500$0.062176$31.088
1000$0.051814$51.814
2000$0.047536$95.072
5000$0.044426$222.13
10000$0.041326$413.26
15000$0.039967$599.505
50000$0.039299$1964.95

DN0150ALP4-7 Product Details

DN0150ALP4-7 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

DN0150ALP4-7 Features


the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz

DN0150ALP4-7 Applications


There are a lot of Diodes Incorporated DN0150ALP4-7 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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