BC857BWH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC857BWH6327XTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
PG-SOT323-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
250mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
12,000
$0.03159
$0.37908
BC857BWH6327XTSA1 Product Details
BC857BWH6327XTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.This product comes in a PG-SOT323-3 device package from the supplier.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC857BWH6327XTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA the supplier device package of PG-SOT323-3
BC857BWH6327XTSA1 Applications
There are a lot of Rochester Electronics, LLC BC857BWH6327XTSA1 applications of single BJT transistors.