BCX70K datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BCX70K Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
350mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
380 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
250MHz
Frequency - Transition
125MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.033240
$0.03324
500
$0.024441
$12.2205
1000
$0.020368
$20.368
2000
$0.018686
$37.372
5000
$0.017463
$87.315
10000
$0.016245
$162.45
15000
$0.015711
$235.665
50000
$0.015448
$772.4
BCX70K Product Details
BCX70K Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 380 @ 2mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As a result, the part has a transition frequency of 250MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BCX70K Features
the DC current gain for this device is 380 @ 2mA 5V the vce saturation(Max) is 550mV @ 1.25mA, 50mA a transition frequency of 250MHz
BCX70K Applications
There are a lot of Rochester Electronics, LLC BCX70K applications of single BJT transistors.