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NSVMMBT2907AM3T5G

NSVMMBT2907AM3T5G

NSVMMBT2907AM3T5G

ON Semiconductor

NSVMMBT2907AM3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVMMBT2907AM3T5G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case SOT-723
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Part Status Active
Power - Max 640mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
8,000 $0.06195 $0.4956
NSVMMBT2907AM3T5G Product Details

NSVMMBT2907AM3T5G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.The device has a 60V maximal voltage - Collector Emitter Breakdown.

NSVMMBT2907AM3T5G Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA

NSVMMBT2907AM3T5G Applications


There are a lot of ON Semiconductor NSVMMBT2907AM3T5G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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