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FJC1308PTF

FJC1308PTF

FJC1308PTF

Rochester Electronics, LLC

FJC1308PTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

FJC1308PTF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-243AA
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 450mV @ 150mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 3A
RoHS StatusROHS3 Compliant
In-Stock:4821 items

FJC1308PTF Product Details

FJC1308PTF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 500mA 2V DC current gain.When VCE saturation is 450mV @ 150mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

FJC1308PTF Features


the DC current gain for this device is 80 @ 500mA 2V
the vce saturation(Max) is 450mV @ 150mA, 1.5A

FJC1308PTF Applications


There are a lot of Rochester Electronics, LLC FJC1308PTF applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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