FJC1308PTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
FJC1308PTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-F3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
500mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 500mA 2V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
450mV @ 150mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
RoHS Status
ROHS3 Compliant
FJC1308PTF Product Details
FJC1308PTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 500mA 2V DC current gain.When VCE saturation is 450mV @ 150mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
FJC1308PTF Features
the DC current gain for this device is 80 @ 500mA 2V the vce saturation(Max) is 450mV @ 150mA, 1.5A
FJC1308PTF Applications
There are a lot of Rochester Electronics, LLC FJC1308PTF applications of single BJT transistors.