D44C12G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 200mA 1V.With a collector emitter saturation voltage of 135mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.40MHz is present in the transition frequency.Collector current can be as low as 4A volts at its maximum.

D44C12G Features

the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 135mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 40MHz

D44C12G Applications

There are a lot of ON Semiconductor D44C12G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface