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FJP3835TU

  • FJP3835TU
  • FJP3835TU

FJP3835TU

FJP3835TU

Rochester Electronics, LLC

FJP3835TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

FJP3835TU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 50W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 3A 4V
Current - Collector Cutoff (Max) 100μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 8A
Transition Frequency 30MHz
Frequency - Transition 30MHz
RoHS Status ROHS3 Compliant
FJP3835TU Product Details

FJP3835TU Overview


DC current gain in this device equals 120 @ 3A 4V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).30MHz is present in the transition frequency.Single BJT transistor shows a 120V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

FJP3835TU Features


the DC current gain for this device is 120 @ 3A 4V
the vce saturation(Max) is 500mV @ 300mA, 3A
a transition frequency of 30MHz

FJP3835TU Applications


There are a lot of Rochester Electronics, LLC FJP3835TU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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