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FJP5554

  • FJP5554
  • FJP5554

FJP5554

FJP5554

Rochester Electronics, LLC

FJP5554 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

FJP5554 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 70W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 800mA 3V
Current - Collector Cutoff (Max) 250μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3.5A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
RoHS Status ROHS3 Compliant
FJP5554 Product Details

FJP5554 Overview


In this device, the DC current gain is 20 @ 800mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 3.5A.A 400V maximal voltage - Collector Emitter Breakdown is present in the device.

FJP5554 Features


the DC current gain for this device is 20 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A

FJP5554 Applications


There are a lot of Rochester Electronics, LLC FJP5554 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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