STD11NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD11NM60N Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD11
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
90W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
450m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 50V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Rise Time
18.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
10A
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.45Ohm
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
40A
Avalanche Energy Rating (Eas)
200 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$1.46300
$2.926
STD11NM60N Product Details
STD11NM60N Description
STD11NM60N is a 600v N-channel MDmesh? II Power MOSFET. This STD11NM60N is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.