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IRFR3411PBF

IRFR3411PBF

IRFR3411PBF

Rochester Electronics, LLC

HEXFET N-CHANNEL POWER MOSFET

SOT-23

IRFR3411PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 130W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.96pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.32000 $0.32
500 $0.3168 $158.4
1000 $0.3136 $313.6
1500 $0.3104 $465.6
2000 $0.3072 $614.4
2500 $0.304 $760

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