PMPB215ENEAX

new-10%

Manufacturer part number:PMPB215ENEAX

Manufacturer:Nexperia USA Inc.

Description:Mosfet Transistor, N Channel, 1.9 A, 80 V, 0.175 Ohm, 10 V, 1.7 V Rohs Compliant: Yes

Case Package:SOT-23

Datasheet:PMPB215ENEAX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Pin Count	6
Reference Standard	IEC-60134
JESD-30 Code	S-PDSO-N6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.6W Ta 15.6W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	3.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	215pF @ 40V
Current - Continuous Drain (Id) @ 25°C	1.9A Ta
Gate Charge (Qg) (Max) @ Vgs	7.2nC @ 10V
Rise Time	2ns
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	9.5 ns
Continuous Drain Current (ID)	1.9A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.23Ohm
Pulsed Drain Current-Max (IDM)	7.6A
DS Breakdown Voltage-Min	80V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free