KSB1116GTA Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 300mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Parts of this part have transition frequencies of 120MHz.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
KSB1116GTA Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 120MHz
KSB1116GTA Applications
There are a lot of Rochester Electronics, LLC KSB1116GTA applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
