MPSA93RLRM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPSA93RLRM Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 30mA 10V
Current - Collector Cutoff (Max)
250nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
200V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
Non-RoHS Compliant
MPSA93RLRM Product Details
MPSA93RLRM Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 30mA 10V.When VCE saturation is 400mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).As you can see, the part has a transition frequency of 50MHz.The device exhibits a collector-emitter breakdown at 200V.
MPSA93RLRM Features
the DC current gain for this device is 25 @ 30mA 10V the vce saturation(Max) is 400mV @ 2mA, 20mA a transition frequency of 50MHz
MPSA93RLRM Applications
There are a lot of Rochester Electronics, LLC MPSA93RLRM applications of single BJT transistors.