BUT11 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BUT11 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Voltage - Rated DC
400V
Max Power Dissipation
100W
Current Rating
5A
Base Part Number
BUT11
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
5A
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 3A
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
850V
Emitter Base Voltage (VEBO)
9V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:3382 items
BUT11 Product Details
BUT11 Description
BUT11 is a single N-channel IGBT power MOSFET transistor from the manufacturer of ON Semiconductor with a voltage of 400V. The operating temperature of BUT11 is -55°C~150°C TJ and its maximum power dissipation are 100W. BUT11 has 3 pins and it is available in a TO-220-3packaging way. The FET Type of BUT11 is NPN and its Emitter Base Voltage is 9V.
BUT11 Features
Element Configuration: Single
JESD-609 Code: e3
ECCN Code: EAR99
Transistor Element Material: SILICON
BUT11 Applications
General-purpose amplifier
Switching applications
Power management
Industrial
Related Products
Similar Transistors - Bipolar (BJT) - Single from ON Semiconductor and other manufacturers
