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BUT11

  • BUT11
  • BUT11

BUT11

BUT11

ON Semiconductor

BUT11 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BUT11 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 400V
Max Power Dissipation 100W
Current Rating 5A
Base Part Number BUT11
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 5A
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 3A
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 850V
Emitter Base Voltage (VEBO) 9V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
BUT11 Product Details

BUT11 Description


BUT11 is a single N-channel IGBT power MOSFET transistor from the manufacturer of ON Semiconductor with a voltage of 400V. The operating temperature of BUT11 is  -55°C~150°C TJ and its maximum power dissipation are 100W. BUT11 has 3 pins and it is available in a TO-220-3packaging way. The FET Type of BUT11 is NPN and its Emitter Base Voltage is 9V.



BUT11 Features


  • Element Configuration: Single

  • JESD-609 Code: e3

  • ECCN Code: EAR99

  • Transistor Element Material: SILICON



BUT11 Applications


  • General-purpose amplifier

  • Switching applications

  • Power management

  • Industrial


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