KSC2669YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC2669YTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Short Body
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
200mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 12V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
30mA
Transition Frequency
250MHz
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
KSC2669YTA Product Details
KSC2669YTA Overview
This device has a DC current gain of 120 @ 2mA 12V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 1mA, 10mA.In this part, there is a transition frequency of 250MHz.The device exhibits a collector-emitter breakdown at 30V.
KSC2669YTA Features
the DC current gain for this device is 120 @ 2mA 12V the vce saturation(Max) is 400mV @ 1mA, 10mA a transition frequency of 250MHz
KSC2669YTA Applications
There are a lot of Rochester Electronics, LLC KSC2669YTA applications of single BJT transistors.