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KSC2669YTA

KSC2669YTA

KSC2669YTA

Rochester Electronics, LLC

KSC2669YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

KSC2669YTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 12V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 30mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
KSC2669YTA Product Details

KSC2669YTA Overview


This device has a DC current gain of 120 @ 2mA 12V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 1mA, 10mA.In this part, there is a transition frequency of 250MHz.The device exhibits a collector-emitter breakdown at 30V.

KSC2669YTA Features


the DC current gain for this device is 120 @ 2mA 12V
the vce saturation(Max) is 400mV @ 1mA, 10mA
a transition frequency of 250MHz

KSC2669YTA Applications


There are a lot of Rochester Electronics, LLC KSC2669YTA applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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