MJE243 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJE243 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
15W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 1V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
4A
Transition Frequency
40MHz
Frequency - Transition
40MHz
RoHS Status
Non-RoHS Compliant
MJE243 Product Details
MJE243 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 200mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
MJE243 Features
the DC current gain for this device is 40 @ 200mA 1V the vce saturation(Max) is 300mV @ 50mA, 500mA a transition frequency of 40MHz
MJE243 Applications
There are a lot of Rochester Electronics, LLC MJE243 applications of single BJT transistors.