KSC2223OMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC2223OMTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
150mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
20mA
Transition Frequency
600MHz
Frequency - Transition
600MHz
Highest Frequency Band
VERY HIGH FREQUENCY B
RoHS Status
ROHS3 Compliant
KSC2223OMTF Product Details
KSC2223OMTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 1mA 6V.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 600MHz.This device displays a 20V maximum voltage - Collector Emitter Breakdown.
KSC2223OMTF Features
the DC current gain for this device is 60 @ 1mA 6V the vce saturation(Max) is 300mV @ 1mA, 10mA a transition frequency of 600MHz
KSC2223OMTF Applications
There are a lot of Rochester Electronics, LLC KSC2223OMTF applications of single BJT transistors.