KSC2328AOBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC2328AOBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 30mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
2A
Transition Frequency
120MHz
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
KSC2328AOBU Product Details
KSC2328AOBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 30mA, 1.5A.There is a transition frequency of 120MHz in the part.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
KSC2328AOBU Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 2V @ 30mA, 1.5A a transition frequency of 120MHz
KSC2328AOBU Applications
There are a lot of Rochester Electronics, LLC KSC2328AOBU applications of single BJT transistors.